Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg.

Präsentation zum Thema: "Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg."—  Präsentation transkript:

1 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 1 11th Workshop on Electronics for LHC and Future Experiments 12. - 16. 9. 2005, Heidelberg

2 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 2 Themenschwerpunkte LHC Maschienenstatus Mikroelektronik, Strahlenhärte Triggersysteme der LHC-Experimente Massenproduktion / Test der Elektronikkomponenten Pixeldetektoren Spannungsversorgung

3 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 3 Schwerpunkt Mikroelektronik Migration zu 0,13 µm AMS: MOS Transistor Modelling Massimo Manghisoni: Untersuchungen an 0,13 µm CMOS Strukturen Neue Chips Hugo Furtado: Delay25 Frederico Faccio: Strahlungstoleranter LD Spannungsregler Microtelectronic Workgroup Meeting

4 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 4 Ehrenfried Seebacher (AMS) CMOS Transistor Modelling Für moderne CMOS-Prozesse werden immer genauere Transistormodelle erforderlich BSIM3 bis 0,18 µm State of the art < 0,18 µm: Weitere Effekte spielen immer größere Rolle Gate channel Leakage Short channel Effect Daher ab 0,13 µm CMOS BSIM4

5 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 5 Massimo Manghisoni (CERN) 0.13 um CMOS technologies for analog front- end circuits in LHC detector upgrades Untersuchung am 0,13 µm CMOS Prozess von STMicroelectronics Besonderes Gewicht auf Rauscheigenschaften und Strahlungseffekte

6 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 6 Massimo Manghisoni (CERN) 0.13 um CMOS technologies for analog front- end circuits in LHC detector upgrades

7 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 7 ü Characteristics unaffected for V GS ³ V T (very small threshold voltage shift) ü Radiation-induced changes are apparent in the constant leakage current zone for both devices ü increase in the subthreshold region in NMOS (edge effects due to radiation-induced charge at the STI oxide). Effect larger in devices with a shorter channel Massimo Manghisoni (CERN) 0.13 um CMOS technologies for analog front- end circuits in LHC detector upgrades

8 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 8 Hugo Furtado (CERN) Delay25 Programmierbare, 4-Kanal-CMOS Delayline Strahlungstolerant und Selbstkalibrierend Clocksignal als Zeitreferenz Zeitauflösung 0,5 ns

9 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 9 Hugo Furtado (CERN) Delay25 DLL zur Selbstkalibration Kanäle 1 - 4

10 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 10 Frederico Faccio (CERN) A radiation-tolerant LDO voltage regulator for HEP applications Motivation Power distribution in LHC experiments is a real challenge Need for voltage regulation close to the electronics to be powered: linear regulators are often used To limit (useless) power dissipation, LDO regulators are desired, having drop-out voltages as low as 100-150mV Rad-hard regulators with these characteristics are prohibitively expensive A rad-hard LDO regulator with limited current capability (300mA) can be developed as an ASIC using our quarter micron CMOS process at low cost!

11 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 11 MinTypMaxComment Output V (V) 2.5 Fixed in this version Input V (V)2.652.73.5 Output I (mA)0250300 Dropout V (mV) 150 At 300mA current Quiescent I (mA) 1 Over-V prot. (V) 3.5 Protects regulator itself Over-I prot. (mA)400 600Switch to current regulation Over-T prot. ( o C)150 170 Disable in/out yes Possible to disable, output flag Frederico Faccio (CERN) A radiation-tolerant LDO voltage regulator for HEP applications

12 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 12 off Over-V monitor Over-T monitor Switches for disable Over-I monitor Error amplifier R1 R2 Bandgap VinVout Gnd Disable in Disable flag Frederico Faccio (CERN) A radiation-tolerant LDO voltage regulator for HEP applications

13 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 13 Frederico Faccio (CERN) A radiation-tolerant LDO voltage regulator for HEP applications

14 Holger Flemming, GSI, EE DVEE-Palaver, 15.11.2005 14 Alesandro Marchioro (CERN) Microelectronic Workgroup meeting CERN lässt Vertrag mit IBM über 0,25 µm CMOS ASIC Produktion auslaufen Derzeit werden 0,13 µm Prozesse von verschiedenen Herstellern evaluiert Es wird diskutiert, ob wieder eine Strahlenharte Digitalbibliothek erstellt wird Bündelung der Kräfte ?